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| 2SK1666 Silicon N-Channel MOS FET Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current Low voltage drive device Can be driven from 4 V * Suitable for motor drive, solenoid drive , DC-DC converter and etc. Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1666 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 60 20 45 180 45 60 150 -55 to +150 Unit V V A A A W C C 2 2SK1666 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.016 0.022 32 3950 1920 360 30 180 630 290 1.3 140 Max -- -- 10 250 2.5 0.02 0.035 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 45 A, VGS = 0 I F = 45 A, VGS = 0, diF/dt = 50 A/s I D = 20 A, VGS = 10 V, RL = 1.5 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 20 A, VGS = 10 V *1 I D = 20 A, VGS = 4 V *1 I D = 20 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK1666 Maximum Safe Operation Area Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (A) 500 300 100 30 10 Ta = 25C 3 1 0 50 100 150 0.5 0.1 D C 10 PW O pe 10 = 1 10 m s m s s 0 s 40 ra tio (1 n sh 20 (T ot ) C = Operation in this area is limited by RDS (on) 25 C ) Case Temperature TC (C) 0.3 3 30 1 10 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 80 Drain Current ID (A) 8V Pulse Test Drain Current ID (A) 4.5 V 60 4V 40 3.5 V 20 VGS = 3 V 50 5V 40 Typical Transfer Characteristics VDS = 10 V Pulse Test 30 20 75C 25C TC = -25C 10 0 2 6 8 4 Drain to Source Voltage VDS (V) 10 0 1 2 3 4 Gate to Source Voltage VGS (V) 5 4 2SK1666 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 2.0 Pulse Test 1.6 0.5 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 0.05 1.2 VGS = 4 V VGS = 10 V 0.8 30 A 0.4 20 A ID = 10 A 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 0.02 0.01 0.005 2 5 20 50 100 10 Drain Current ID (A) 200 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.1 Pulse Test 100 Forward Transfer Admittance vs. Drain Current Ta = -25C 50 0.08 0.06 ID = 30 A 0.04 VGS = 4 V 0.02 VGS = 10 V 0 -40 20 A 10 A 30 A 10 A, 20 A 160 20 10 5 2 1 0.5 Pulse Test VDS = 10 V 75C 25C 0 80 120 40 Case Temperature TC (C) 1 2 5 10 20 Drain Current ID (A) 50 5 2SK1666 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) di/dt = 50 A/s VGS = 0, Ta = 25C Capacitance C (pF) 100 1,000 Ciss Coss Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 5 2 Crss 10 VGS = 0 f = 1 MHz 1 5 20 10 50 100 200 Reverse Drain Current IDR (A) 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) ID = 35 A 20 Gate to Source Voltage VGS (V) Switching Characteristics 1,000 500 Switching Time t (ns) tf 200 100 50 td (on) 20 10 0.5 . VGS = 10 V, VDD = 30 V . PW = 2 s, duty 1% 1 2 5 10 20 Drain Current ID (A) 50 tr td (off) 80 16 60 VDS 40 VDD = 10 V 25 V 10 V 20 VDD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc) 12 8 4 0 0 200 6 2SK1666 Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 VGS = 10 V 40 0, -5 V 20 4V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.03 0.02 0.01 1 sh o 1.0 TC = 25C ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM lse t pu T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 0.01 10 100 10 7 Unit: mm 5.0 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.5 0.3 2.7 1.0 0.2 5.45 0.5 5.45 0.5 21.0 0.5 4.0 2.6 1.4 Max 5.0 19.9 0.3 3.2 1.6 1.4 Max 0.6 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM -- -- 5.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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